Anomalous current injection phenomena at the emitter-base junction of InP/InGaAs HBTs

Author

Sachelarie, Dan ; Sachelarie, Mariana

Author_Institution

Nat. Inst. of Microtechnol., Bucharest, Romania

Volume

1

fYear

1997

fDate

7-11 Oct 1997

Firstpage

297

Abstract

An analysis of the injection phenomena in the InP/InGaAs heterojunction bipolar transistors passivated with Si₃N₄ has been made. Two different mechanisms are shown to be responsible for the anomalous carrier injection at the emitter-base heterojunction in the low voltage range. One is based on the thermionic emission in an accumulation region along the emitter edges and the other based on the preferential electron tunnelling, also in a thin region along the emitter edges

Keywords

III-V semiconductors; accumulation layers; gallium arsenide; heterojunction bipolar transistors; indium compounds; passivation; thermionic electron emission; tunnelling; InP-InGaAs; InP/InGaAs HBTs; InP/InGaAs heterojunction bipolar transistors; Si₃N₄; accumulation region; anomalous carrier injection; anomalous current injection phenomena; emitter edges; emitter-base heterojunction; emitter-base junction; injection phenomena; low voltage range; passivation; preferential electron tunnelling; thermionic emission; Bipolar transistors; Crystallography; Electron emission; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Low voltage; Shape; Thermionic emission; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International

Conference_Location

Sinaia

Print_ISBN

0-7803-3804-9

Type

conf

DOI

10.1109/SMICND.1997.651602

Filename

651602