Title :
Anomalous current injection phenomena at the emitter-base junction of InP/InGaAs HBTs
Author :
Sachelarie, Dan ; Sachelarie, Mariana
Author_Institution :
Nat. Inst. of Microtechnol., Bucharest, Romania
Abstract :
An analysis of the injection phenomena in the InP/InGaAs heterojunction bipolar transistors passivated with Si3N4 has been made. Two different mechanisms are shown to be responsible for the anomalous carrier injection at the emitter-base heterojunction in the low voltage range. One is based on the thermionic emission in an accumulation region along the emitter edges and the other based on the preferential electron tunnelling, also in a thin region along the emitter edges
Keywords :
III-V semiconductors; accumulation layers; gallium arsenide; heterojunction bipolar transistors; indium compounds; passivation; thermionic electron emission; tunnelling; InP-InGaAs; InP/InGaAs HBTs; InP/InGaAs heterojunction bipolar transistors; Si3N4; accumulation region; anomalous carrier injection; anomalous current injection phenomena; emitter edges; emitter-base heterojunction; emitter-base junction; injection phenomena; low voltage range; passivation; preferential electron tunnelling; thermionic emission; Bipolar transistors; Crystallography; Electron emission; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Low voltage; Shape; Thermionic emission; Tunneling;
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
DOI :
10.1109/SMICND.1997.651602
