• DocumentCode
    2168054
  • Title

    Glass passivated structure for high power thyristors

  • Author

    Liiceanu, Carmen ; Nichita, Anca ; Marinescu, Viorel ; Liiceanu, Doru ; Turtudau, Florian

  • Author_Institution
    Baneasa SA, Bucharest, Romania
  • Volume
    1
  • fYear
    1997
  • fDate
    7-11 Oct 1997
  • Firstpage
    301
  • Abstract
    A low cost and reliable glass passivated structure for 35 Arms thyristors has been manufactured using sealed tube diffusions, mesa etching from both sides of the wafer and a lift-off metallisation technique. Best trade-off IG_T_dν/dt performance has been designed using two dimensional simulation of triggering mechanisms, followed by experimental validation of calculated values
  • Keywords
    etching; passivation; semiconductor device metallisation; semiconductor device models; thyristors; 35 Arms thyristors; glass passivated structure; high power thyristors; lift-off metallisation; low cost; mesa etching; reliable glass passivated structure; sealed tube diffusions; triggering mechanisms; two dimensional simulation; Algorithm design and analysis; Breakdown voltage; Cathodes; Conductivity; Etching; Glass; Lead; Silicon; Thyristors; Virtual manufacturing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-3804-9
  • Type

    conf

  • DOI
    10.1109/SMICND.1997.651603
  • Filename
    651603
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2168054