DocumentCode :
2168054
Title :
Glass passivated structure for high power thyristors
Author :
Liiceanu, Carmen ; Nichita, Anca ; Marinescu, Viorel ; Liiceanu, Doru ; Turtudau, Florian
Author_Institution :
Baneasa SA, Bucharest, Romania
Volume :
1
fYear :
1997
fDate :
7-11 Oct 1997
Firstpage :
301
Abstract :
A low cost and reliable glass passivated structure for 35 Arms thyristors has been manufactured using sealed tube diffusions, mesa etching from both sides of the wafer and a lift-off metallisation technique. Best trade-off IG_T_dν/dt performance has been designed using two dimensional simulation of triggering mechanisms, followed by experimental validation of calculated values
Keywords :
etching; passivation; semiconductor device metallisation; semiconductor device models; thyristors; 35 Arms thyristors; glass passivated structure; high power thyristors; lift-off metallisation; low cost; mesa etching; reliable glass passivated structure; sealed tube diffusions; triggering mechanisms; two dimensional simulation; Algorithm design and analysis; Breakdown voltage; Cathodes; Conductivity; Etching; Glass; Lead; Silicon; Thyristors; Virtual manufacturing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
Type :
conf
DOI :
10.1109/SMICND.1997.651603
Filename :
651603
Link To Document :
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