DocumentCode :
2168174
Title :
GaN C-Band HPA for Phased-Array Applications
Author :
van Wanum, M. ; de Hek, A.P. ; van Vliet, Frank E.
Author_Institution :
TNO, The Hague, Netherlands
fYear :
2013
fDate :
13-16 Oct. 2013
Firstpage :
1
Lastpage :
4
Abstract :
In the UMS GH25-10 GaN MMIC technology a C-band high power amplifier (HPA) has been realized. The current design is primarily intended for use in a space-based SAR system with a center frequency of 5.4 GHz and a sweep bandwidth of 100 MHz. To enable reuse of the amplifier in other radar systems such as weather radar, a large bandwidth is required. A design bandwidth from 5 to 6 GHz has been used. Simulation and measurement data from on-wafer and mounted samples will be shown. Showing more than 50 W output power with 45% efficiency the HPA shows sufficient performance to be used in a module for state-of-the-art active electronically scanned arrays. The measured output power and efficiency are a record for MMIC amplifiers.
Keywords :
III-V semiconductors; MMIC power amplifiers; gallium compounds; phased array radar; spaceborne radar; C-band HPA; GaN; MMIC amplifier; MMIC technology; active electronically scanned arra; bandwidth 100 MHz; efficiency 45 percent; frequency 5 GHz to 6 GHz; high power amplifier; phased array application; space based SAR system; Gallium nitride; Logic gates; MMICs; Power generation; Radar; Threshold voltage; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013 IEEE
Conference_Location :
Monterey, CA
Type :
conf
DOI :
10.1109/CSICS.2013.6659229
Filename :
6659229
Link To Document :
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