DocumentCode
2168220
Title
GaN Transistors - The Best Emerging Technology for Power Conversion from DC through RF
Author
Lidow, A.
Author_Institution
Efficient Power Conversion Corp., El Segundo, CA, USA
fYear
2013
fDate
13-16 Oct. 2013
Firstpage
1
Lastpage
4
Abstract
It has been three years since the first gallium nitride transistors were delivered as power MOSFET replacements in a commercial power conversion application. Since that time there has been major interest, and rapid progress in the development and commercialization of this new technology. In this paper we will give an update on GaN technology, its performance compared with power MOSFETs and LDMOS RF transistors, as well as the status of "early adopters" in the world of power conversion.
Keywords
III-V semiconductors; gallium compounds; power MOSFET; power convertors; wide band gap semiconductors; GaN; LDMOS RF transistor; power MOSFET; power conversion application; Gallium nitride; MOSFET; Power amplifiers; Radio frequency; Silicon; Wireless communication;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013 IEEE
Conference_Location
Monterey, CA
Type
conf
DOI
10.1109/CSICS.2013.6659230
Filename
6659230
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