DocumentCode
2168332
Title
A model for anomalous leakage current in flash memories and its application for the prediction of retention characteristics
Author
Okada, K.
Author_Institution
ULSI Process Technol. Dev. Center, Matsushita Electr. Ind. Co., Ltd, Kyoto, Japan
fYear
2001
fDate
2-5 Dec. 2001
Abstract
The mechanism of anomalous leakage current (ALC) which induces anomalous retention failure in flash memory devices has been studied utilizing the modified floating gate technique. Based on the model, a new prediction method for retention failure rate has been proposed, which realizes drastic shortening of the quality assurance approaches.
Keywords
failure analysis; flash memories; integrated circuit modelling; integrated circuit reliability; leakage currents; semiconductor device breakdown; MOS capacitor; anomalous leakage current model; anomalous retention failure; dielectric breakdown; flash memories; modified floating gate technique; nMOSFETs; quality assurance shortening; reliability theory; retention characteristics; retention failure rate prediction; tunnel oxides; Automatic logic units; Degradation; Flash memory; Flash memory cells; Leakage current; MOSFETs; Nonvolatile memory; Prediction methods; Predictive models; Quality assurance;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-7050-3
Type
conf
DOI
10.1109/IEDM.2001.979609
Filename
979609
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