Linearity Improvement of GaN HEMT for RF Power Amplifiers

Author

Inoue, Ken ; Yamamoto, Hiroshi ; Nakata, K. ; Yamada, Fumihiko ; Yamamoto, Takayuki ; Sano, Shumpei

Author_Institution

Transm. Devices R&D Labs., Sumitomo Electr. Ind., Ltd., Yokohama, Japan

fYear

2013

fDate

13-16 Oct. 2013

Firstpage

1

Lastpage

4

Abstract

The linearity has become more important to expand GaN HEMTs into microwave amplifier markets. This paper describes the outline of the large signal model of our 0.4μm AlGaN/GaN HEMT, considering the pulse biased 24 V operation. The analysis which utilizes the constructed Angelov model proved that the intermodulation distortion (IMD) of more than 10 dB backed off region is determined by the sub-threshold gm profile, namely steep rising gm profile degrades IMD. Thus, we proposed a thin n-GaN layer inserted buffer structure (ini-buffer), which realizes the significant IMD improvement of 8 dB, in the backed-off region.

Keywords

III-V semiconductors; aluminium compounds; buffer circuits; gallium compounds; high electron mobility transistors; intermodulation distortion; microwave power amplifiers; wide band gap semiconductors; AlGaN-GaN; Angelov model; HEMT; IMD; RF power amplifier; gain 8 dB; inibuffer; intermodulation distortion; large signal model; microwave power amplifier market; size 0.4 mum; steep rising gm profile; subthreshold gm profile; thin n-GaN layer inserted buffer structure; voltage 24 V; Gallium nitride; HEMTs; Integrated circuit modeling; Linearity; Microwave amplifiers; Microwave circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013 IEEE

Conference_Location

Monterey, CA

Type

conf

DOI

10.1109/CSICS.2013.6659235

Filename

6659235