K-band Si/SiGe HBT MMIC amplifiers using lumped passive components with a micromachined structure

Author

Liang-Hung Lu ; Jae-Sung Rieh ; Bhattacharya, P. ; Katehi, L.P.B. ; Croke, E.T. ; Ponchak, G.E. ; Alterovitz, S.A.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

fYear

1998

fDate

11-8 June 1998

Firstpage

17

Lastpage

20

Abstract

Using Si/SiGe heterojunction bipolar transistors with a maximum oscillation frequency of 52 GHz and a novel structure for passive components, a two-stage K-band lumped-element amplifier has been designed and fabricated on high-resistivity Si substrates. The chip size including biasing and RF chokes is 0.92/spl times/0.67 mm/sup 2/.

Keywords

Ge-Si alloys; MMIC amplifiers; bipolar MMIC; elemental semiconductors; heterojunction bipolar transistors; lumped parameter networks; micromachining; semiconductor materials; silicon; 52 GHz; K-band Si/SiGe HBT MMIC amplifier; Si-SiGe; heterojunction bipolar transistor; lumped passive components; micromachined structure; Etching; Germanium silicon alloys; Gold; Heterojunction bipolar transistors; K-band; MMICs; Millimeter wave technology; Molecular beam epitaxial growth; Silicon germanium; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 1998 IEEE

Conference_Location

Baltimore, MD, USA

ISSN

1097-2633

Print_ISBN

0-7803-4439-1

Type

conf

DOI

10.1109/RFIC.1998.682038

Filename

682038