Title :
Simulation of the writing and erasing processes of GeSbTe and GeSbTeSn with GeN interlayers in the case of dual level DVR discs
Author :
Hyot, B. ; Poupinet, L. ; Armand, M.F. ; Rolland, B. ; Marty, J. ; Fargeix, A. ; Lartigue, O. ; Lagrange, A. ; Anciant, R. ; Hofmann, H. ; Knappman, S. ; Knittel, J. ; Richter, H.
Author_Institution :
Lab. d´´Electron. et de Technol. de l´´Inf., CEA, Centre d´´Etudes Nucleaires de Grenoble, France
Abstract :
In current research on optical phase change data storage, it is essential to understand accurately the physics underlying writing and erasing processes. Computer simulation combined with the appropriate physical models and experimental data is the most valuable tool available. We have established optical, thermal and phase transformation (thermodynamics and kinetics) models and constructed a simulation based on them. We use this simulation to reproduce and forecast the writing and erasing processes of GeSbTe and GeSbTeSn with GeN interlayers in the case of dual level DVR (digital video recording) discs.
Keywords :
antimony compounds; crystallisation; digital versatile discs; doping profiles; electronic engineering computing; germanium compounds; reaction kinetics; thermal analysis; tin; video discs; video recording; GeN interlayers; GeSbTe layers; GeSbTe-GeN; GeSbTe:Sn-GeN; GeSbTeSn layers; Sn doped GeSbTe; digital video recording; dual level DVR discs; erasing process simulation; kinetics models; optical models; optical phase change data storage; phase transformation models; physical models; thermodynamics models; writing process simulation; Computational modeling; Computer simulation; Kinetic theory; Memory; Optical recording; Physics; Predictive models; Thermodynamics; Video recording; Writing;
Conference_Titel :
Optical Memory and Optical Data Storage Topical Meeting, 2002. International Symposium on
Print_ISBN :
0-7803-7379-0
DOI :
10.1109/OMODS.2002.1028591
