Title :
New charge trapping phenomena in Recessed-Channel-Array-Transistor (RCAT) after Fowler-Nordheim stress
Author :
Lee, Sung-Young ; Park, Se Geun ; Hwang, Samjin ; Jeon, Jaeeun ; Lee, Wonshik
Author_Institution :
DRAM QA, Samsung Electron. Co., Hwasung
Abstract :
We have observed new charge trapping phenomena in sub-80-nm DRAM recessed- channel-array-transistor (RCAT) after Fowler-Nordheim (FN) stress. Gate stack process strongly affected the charge trapping and the trap generating in oxide bulk and interface of RCAT. According to the trapped charges and/or the generated traps after FN stress, the data retention time and writing capabilities of DRAM were dramatically changed. We have summarized the electrical characteristics of RCAT fabricated with different gate stack processes.
Keywords :
DRAM chips; MOSFET; stress effects; DRAM; Fowler-Nordheim stress; RCAT; charge trapping phenomena; data retention time; electrical characteristics; gate stack process; recessed-channel-array-transistor; trap generation; DRAM chips; Electric variables; Electron traps; Neck; Oxidation; Random access memory; Silicon compounds; Thermal stresses; Wet etching; Writing;
Conference_Titel :
Integrated Circuit Design and Technology and Tutorial, 2008. ICICDT 2008. IEEE International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-1810-7
Electronic_ISBN :
978-1-4244-1811-4
DOI :
10.1109/ICICDT.2008.4567234
