• DocumentCode
    2168529
  • Title

    Sacrificial metal wafer level burn-in KGD

  • Author

    Ivy, Wilburn L., Jr. ; Godavarti, Prasad ; Alizy, Nouri ; McKenzie, Teresa ; Mitchell, Doug

  • Author_Institution
    Motorola Inc., Chandler, AZ, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    535
  • Lastpage
    540
  • Abstract
    Sacrificial Metal Wafer Level Burn-In KGD (Known Good Die) is a strategic enabling technology that allows Motorola to maintain its competitive edge in the electronic personal communications, computer and automotive market place. This paper will focus on the development and implementation of 127 mm and 200 mm Sacrificial Metal Wafer Level Burn-In KGD at Motorola Inc. This joint effort between teams at Motorola Austin-TSG (Transportation Systems Group), Motorola Chandler-SMD (Strategic Manufacturing Deployment) and MOS12 at Chandler is currently the only effective WLBI technology in production in the world. The current multi-port system is capable of testing up to twenty-eight 200 mm wafers or forty-eight 127 mm wafers simultaneously. We will discuss the test system design, contact technology and wafer fixture design which enables this low cost solution to KGD. We will also examine the thermal and electrical performance of the system on a port to port basis. We will also examine the thermal and electrical performance across test chamber boundaries
  • Keywords
    integrated circuit reliability; integrated circuit technology; integrated circuit testing; wafer-scale integration; 127 mm; 200 mm; Motorola; Transportation Systems Group; WLBI technology; automotive market place; burn-in KGD; contact technology; electrical performance; electronic personal communication; multi-port system; sacrificial metal wafer; test chamber boundaries; test system design; thermal performance; wafer fixture design; Automotive engineering; Consumer electronics; Costs; Electronic equipment testing; Electronic packaging thermal management; Electronics packaging; Manufacturing; Probes; System testing; Wafer scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components & Technology Conference, 2000. 2000 Proceedings. 50th
  • Conference_Location
    Las Vegas, NV
  • Print_ISBN
    0-7803-5908-9
  • Type

    conf

  • DOI
    10.1109/ECTC.2000.853210
  • Filename
    853210