DocumentCode :
2168569
Title :
CMOS SOI technology for WPAN. Application to 60 GHz LNA
Author :
Siligaris, A. ; Mounet, C. ; Reig, B. ; Vincent, P. ; Michel, A.
Author_Institution :
CEA/LETI-MINATEC, Grenoble
fYear :
2008
fDate :
2-4 June 2008
Firstpage :
17
Lastpage :
20
Abstract :
This paper discusses the design of a 60 GHz low noise amplifier (LNA) using a standard low power SOI CMOS process from ST Microelectronics. First, we outline the technology as well as the mm-wave design challenges. Using recent work on coplanar waveguide (CPW) modeling, we describe how it´s possible to use parametric, 3D electromagnetic simulation to complete or replace analytical models of on-chip passive devices. A short description of the transistor model is also provided. Finally, we discuss the details of the LNA design and show how the simulation results compare to the measurements.
Keywords :
CMOS integrated circuits; field effect MIMIC; low noise amplifiers; millimetre wave amplifiers; personal area networks; silicon-on-insulator; CMOS SOI technology; coplanar waveguide modeling; frequency 60 GHz; low noise amplifier; onchip passive devices; Analytical models; CMOS process; CMOS technology; Coplanar waveguides; Electromagnetic modeling; Electromagnetic scattering; Electromagnetic waveguides; Low-noise amplifiers; Microelectronics; Semiconductor device modeling; 60GHz; CMOS; LNA; RF modeling; SOI;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Circuit Design and Technology and Tutorial, 2008. ICICDT 2008. IEEE International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-1810-7
Electronic_ISBN :
978-1-4244-1811-4
Type :
conf
DOI :
10.1109/ICICDT.2008.4567236
Filename :
4567236
Link To Document :
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