DocumentCode
2168627
Title
High performance poly-Si TFTs on a glass by a stable scanning CW laser lateral crystallization
Author
Hara, A. ; Mishima, Y. ; Kakehi, T. ; Takeuchi, F. ; Takei, M. ; Yoshino, K. ; Suga, K. ; Chida, M. ; Sasaki, N.
Author_Institution
Fujitsu Labs. Ltd., Atsugi, Japan
fYear
2001
fDate
2-5 Dec. 2001
Abstract
We have developed high performance poly-Si TFTs, which have comparable performance to that of [100] Si-MOSFETs, by using a stable scanning DPSS CW laser lateral crystallization without introduction of thermal damage to 300/spl times/300 mm/sup 2/ glass substrates with process temperature below 450/spl deg/C.
Keywords
carrier mobility; crystallisation; elemental semiconductors; grain boundaries; laser beam annealing; recrystallisation annealing; silicon; thin film transistors; 450 C; Si-SiO/sub 2/; [100] orientation film; diode pumped solid state CW laser; glass substrate; grain boundary distribution; n-channel mobilities; poly-Si TFTs; process temperature; stable scanning CW laser lateral crystallization; system on glass; Crystallization; Glass; Grain boundaries; Laser stability; Power lasers; Pulsed laser deposition; Pump lasers; Rough surfaces; Solid lasers; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-7050-3
Type
conf
DOI
10.1109/IEDM.2001.979622
Filename
979622
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