DocumentCode
2168644
Title
A new high-performance poly-Si TFT by simple excimer laser annealing on selectively floating a-Si layer
Author
Kim, C.H. ; Song, I.H. ; Jung, S.H. ; Han, M.K.
Author_Institution
Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
fYear
2001
fDate
2-5 Dec. 2001
Abstract
A new poly-Si TFT with a single grain-boundary has been fabricated by a simple ELA method which employs a selectively floating a-Si active layer. A thermally insulating air-gap between the floating a-Si and substrate successfully induces the lateral grain growth. Large lateral grains exceeding 4 /spl mu/m have been grown by a single laser irradiation with wide ELA process window. The proposed poly-Si TFT exhibits high mobility of 331 cm/sup 2//V sec due to the high-quality grains.
Keywords
carrier mobility; elemental semiconductors; grain boundaries; grain growth; grain size; laser beam annealing; silicon; thin film transistors; Si; air gap; carrier mobility; excimer laser annealing; grain boundary; grain size; lateral grain growth; polysilicon TFT; selectively floating a-Si layer; Air gaps; Annealing; Grain size; Optical films; Scanning electron microscopy; Semiconductor films; Substrates; Temperature; Thermal conductivity; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-7050-3
Type
conf
DOI
10.1109/IEDM.2001.979623
Filename
979623
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