DocumentCode :
2168718
Title :
Quantum tunneling Sb-heterostructure millimeter-wave diodes
Author :
Schulman, J.N. ; Croke, E.T. ; Chow, D.H. ; Dunlap, H.L. ; Holabird, K.S. ; Morgan, M.A. ; Weinreb, S.
Author_Institution :
HRL Labs., Malibu, CA, USA
fYear :
2001
fDate :
2-5 Dec. 2001
Abstract :
We have developed a new zero bias millimeter wave diode based on quantum tunneling in an InAs/AlSb/GaSb nanostructure. It is ideal for square law radiometry and passive millimeter wave imaging. Excellent sensitivity has been demonstrated at present up to 110 GHz, with higher bandwidth predicted for smaller area diodes.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; millimetre wave diodes; millimetre wave imaging; radiometry; tunnel diodes; 110 GHz; InAs-AlSb-GaSb; InAs/AlSb/GaSb nanostructure; Sb-heterostructure; bandwidth; millimeter-wave diode; passive millimeter-wave imaging; quantum tunneling; sensitivity; square law radiometry; zero bias; Electrons; Frequency; Laboratories; Millimeter wave technology; Photonic band gap; Reproducibility of results; Semiconductor diodes; Space exploration; Tunneling; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
Type :
conf
DOI :
10.1109/IEDM.2001.979627
Filename :
979627
Link To Document :
بازگشت