Title :
Investigation of high-current effects in staggered lineup InP/GaAsSb/InP heterostructure bipolar transistors: temperature characterization and comparison to conventional type-I HBTs and DHBTs
Author :
Bolognesi, C.R. ; Dvorak, M.W. ; Pitts, O. ; Watkins, S.P. ; MacElwee, T.W.
Author_Institution :
Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC, Canada
Abstract :
We study the mechanism giving rise to the "Kirk-like" f/sub T/ roll-off at very high-current densities in "type-II" lineup InP/GaAsSb/InP DHBTs, and we compare this mechanism to the behavior of conventional "type-I" SHBTs and DHBTs. Because of the type-II band lineup, the physical operation of InP/GaAsSb/InP DHBTs differs significantly from that of conventional devices. The present paper provides the first clarification of high current operation in these devices, as well as new experimental insights into the operation of conventional type-I DHBTs.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; InP-GaAsSb-InP; InP/GaAsSb/InP double heterostructure bipolar transistor; Kirk-like current gain cutoff frequency roll-off; high current operation; temperature characteristics; type-I DHBT; type-I HBT; type-II band lineup; Bipolar transistors; Current density; Cutoff frequency; Double heterojunction bipolar transistors; Electronic mail; Indium phosphide; Laboratories; Physics; Semiconductor devices; Temperature;
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
DOI :
10.1109/IEDM.2001.979628
