DocumentCode :
2168789
Title :
Which is the best dual-port SRAM in 45-nm process technology? — 8T, 10T single end, and 10T differential —
Author :
Noguchi, Hiroki ; Okumura, Shunsuke ; Iguchi, Yusuke ; Fujiwara, Hidehiro ; Morita, Yasuhiro ; Nii, Koji ; Kawaguchi, Hiroshi ; Yoshimoto, Masahiko
Author_Institution :
Kobe Univ., Kobe
fYear :
2008
fDate :
2-4 June 2008
Firstpage :
55
Lastpage :
58
Abstract :
This paper compares readout powers and operating frequencies among dual-port SRAMs: an 8T SRAM, 10T single-end SRAM, and 10T differential SRAM. The conventional 8T SRAM has the least transistor count, and is the most area efficient. However, the readout power becomes large and the cycle time increases due to peripheral circuits. The 10T single-end SRAM is our proposed SRAM, in which a dedicated inverter and transmission gate are appended as a single-end read port. The readout power of the 10T single-end SRAM is reduced by 75% and the operating frequency is increased by 95%, over the 8T SRAM. On the other hand the 10T differential SRAM can operate fastest, because its small differential voltage of 50 mV achieves the high-speed operation. In terms of the power efficiency, however, the sense amplifier and precharge circuits lead to the power overhead. As a result, the 10T single-end SRAM always consumes lowest readout power compared to the 8T and the 10T differential SRAM.
Keywords :
SRAM chips; power overhead lines; readout electronics; SRAM; operating frequencies; peripheral circuits; power overhead; precharge circuits; readout powers; sense amplifier; size 45 nm; voltage 50 mV; Circuit topology; Frequency; HDTV; Inverters; Power amplifiers; Random access memory; Signal processing; TV; Video codecs; Voltage; SRAM; differential port; low power; non-precharge-type SRAM; two-port SRAM; video processing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Circuit Design and Technology and Tutorial, 2008. ICICDT 2008. IEEE International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-1810-7
Electronic_ISBN :
978-1-4244-1811-4
Type :
conf
DOI :
10.1109/ICICDT.2008.4567245
Filename :
4567245
Link To Document :
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