Author :
Collaert, N. ; von Arnim, K. ; Rooyackers, R. ; Vandeweyer, T. ; Mercha, A. ; Parvais, B. ; Witters, L. ; Nackaerts, A. ; Sanchez, E. Altamirano ; Demand, M. ; Hikavyy, A. ; Demuynck, S. ; Devriendt, K. ; Bauer, F. ; Ferain, I. ; Veloso, A. ; Meyer, K. De
Abstract :
While the potential of FinFETs for large-scale integration (LSI) was demonstrated before on relaxed device dimensions, in this paper we present performance data of aggressively scaled transistors, ring oscillators and SRAM cells. FinFET SRAMs are shown to have excellent VDD scalability (SNM=185 mV at 0.6 V), enabling sub-32 nm low-voltage design.
Keywords :
MOSFET circuits; SRAM chips; digital integrated circuits; integrated circuit design; large scale integration; FinFET; HfSiON-TiN; SRAM cell; large-scale integration; size 10 nm; size 30 nm; size 32 nm; voltage 0.6 V; voltage 10 mV; Dielectrics; FinFETs; Image motion analysis; Implants; Large scale integration; Optical devices; Random access memory; Ring oscillators; Scalability; Tin; SOI FinFET; SRAM; ring oscillators;
