InP/InGaAs DHBTs with 341-GHz f/sub T/ at high current density of over 800 kA/cm/sup 2/

Author

Ida, M. ; Kurishima, Kenji ; Watanabe, N. ; Enoki, T.

Author_Institution

NTT Photonics Labs., NTT Corp., Kanagawa, Japan

fYear

2001

fDate

2-5 Dec. 2001

Abstract

We describe MOVPE-grown InP/InGaAs DHBTs with a 150-nm-thick collector. The collector current blocking at the base/collector heterointerface is perfectly suppressed by the compositionally step-graded structure even at collector current density of over 1000 kA/cm/sup 2/. A cut-off frequency f/sub T/ of 341 GHz is obtained at high collector current density of 833 kA/cm/sup 2/ with practical on-state breakdown characteristics. This is the highest f/sub T/ every reported for any bipolar transistors.

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device breakdown; vapour phase epitaxial growth; 341 GHz; InP-InGaAs; InP/InGaAs DHBT; MOVPE growth; base/collector heterointerface; collector current blocking; compositionally step-graded structure; current density; cut-off frequency; on-state breakdown characteristics; Annealing; Circuit testing; Current density; Double heterojunction bipolar transistors; Etching; Feeds; Indium gallium arsenide; Indium phosphide; Microscopy; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7050-3

Type

conf

DOI

10.1109/IEDM.2001.979630

Filename

979630