High-speed and low-power InAlAs/InGaAs heterojunction bipolar transistors for dense ultra high speed digital applications

Author

Sokolich, A. ; Thomas, S., III ; Fields, C.H.

Author_Institution

HRL Labs., Malibu, CA, USA

fYear

2001

fDate

2-5 Dec. 2001

Abstract

We demonstrate an InP-based high-speed, low-power HBT technology with 180 GHz cutoff frequency. Current Mode Logic (CML) static dividers at 64 GHz maximum toggle rate at a power dissipation of 29 mW/flip-flop and 16 GHz maximum toggle rate at a power dissipation of 1.8 mW/flip-flop show that the technology is applicable to dense 40 Gbps logic circuits. Submicron InP HBT technology opens up the possibility of one thousand logic gates all operating at 10-40 GHz clock rates at a few watts of total power dissipation.

Keywords

III-V semiconductors; aluminium compounds; bipolar logic circuits; current-mode logic; dividing circuits; flip-flops; gallium arsenide; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; low-power electronics; 1.8 mW; 10 to 40 GHz; 16 GHz; 180 GHz; 29 mW; 40 Gbit/s; 64 GHz; InAlAs-InGaAs; InAlAs/InGaAs heterojunction bipolar transistor; InP; InP substrate; current mode logic static divider; cutoff frequency; dense ultra-high-speed digital applications; flip-flop; high-speed low-power operation; logic circuit; logic gate; power dissipation; submicron technology; toggle rate; Clocks; Cutoff frequency; Flip-flops; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Indium phosphide; Logic circuits; Logic gates; Power dissipation;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7050-3

Type

conf

DOI

10.1109/IEDM.2001.979631

Filename

979631