Title :
Independent-gate four-terminal FinFET SRAM for drastic leakage current reduction
Author :
Endo, Kazuhiko ; O´Uchi, Shin-Ichi ; Ishikawa, Yuki ; Liu, Yongxun ; Matsukawa, Takashi ; Sakamoto, Kunihiro ; Masahara, Meishoku ; Tsukada, Junichi ; Ishii, Kenichi ; Yamauchi, Hiromi ; Suzuki, Eiichi
Author_Institution :
Nanoelectron. Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba
Abstract :
An independent-gate four-terminal FinFET SRAM have been successfully fabricated for drastic leakage current reduction. The new SRAM is consisted of a four-terminal (4T-) FinFET which has a flexible Vth controllability. The 4T-FinFET with a TiN metal gate is fabricated by a newly developed gate separation etching process. By appropriately controlling the Vth of the 4T-FinFET, we have successfully demonstrated the reduction of the leakage current and power consumption of the SRAM cell.
Keywords :
MOSFET circuits; SRAM chips; leakage currents; SRAM cell; TiN; drastic leakage current reduction; gate separation etching process; independent-gate four-terminal FinFET SRAM; metal gate; Acceleration; Circuits; Energy consumption; Etching; Fabrication; FinFETs; Leakage current; Random access memory; Resists; Tin; FinFET; SRAM; leakage current; separated gate;
Conference_Titel :
Integrated Circuit Design and Technology and Tutorial, 2008. ICICDT 2008. IEEE International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-1810-7
Electronic_ISBN :
978-1-4244-1811-4
DOI :
10.1109/ICICDT.2008.4567247
