Independent-gate four-terminal FinFET SRAM for drastic leakage current reduction

Author

Endo, Kazuhiko ; O´Uchi, Shin-Ichi ; Ishikawa, Yuki ; Liu, Yongxun ; Matsukawa, Takashi ; Sakamoto, Kunihiro ; Masahara, Meishoku ; Tsukada, Junichi ; Ishii, Kenichi ; Yamauchi, Hiromi ; Suzuki, Eiichi

Author_Institution

Nanoelectron. Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba

fYear

2008

fDate

2-4 June 2008

Firstpage

63

Lastpage

66

Abstract

An independent-gate four-terminal FinFET SRAM have been successfully fabricated for drastic leakage current reduction. The new SRAM is consisted of a four-terminal (4T-) FinFET which has a flexible V_th controllability. The 4T-FinFET with a TiN metal gate is fabricated by a newly developed gate separation etching process. By appropriately controlling the V_th of the 4T-FinFET, we have successfully demonstrated the reduction of the leakage current and power consumption of the SRAM cell.

Keywords

MOSFET circuits; SRAM chips; leakage currents; SRAM cell; TiN; drastic leakage current reduction; gate separation etching process; independent-gate four-terminal FinFET SRAM; metal gate; Acceleration; Circuits; Energy consumption; Etching; Fabrication; FinFETs; Leakage current; Random access memory; Resists; Tin; FinFET; SRAM; leakage current; separated gate;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuit Design and Technology and Tutorial, 2008. ICICDT 2008. IEEE International Conference on

Conference_Location

Austin, TX

Print_ISBN

978-1-4244-1810-7

Electronic_ISBN

978-1-4244-1811-4

Type

conf

DOI

10.1109/ICICDT.2008.4567247

Filename

4567247