• DocumentCode
    2168869
  • Title

    A Memory Fault Simulator for Radiation-Induced Effects in SRAMs

  • Author

    Rech, P. ; Bosio, A. ; Girard, P. ; Pravossoudovitch, S. ; Virazel, A. ; Dilillo, L.

  • Author_Institution
    LIRMM, Univ. Montpellier 2, Montpellier, France
  • fYear
    2010
  • fDate
    1-4 Dec. 2010
  • Firstpage
    100
  • Lastpage
    105
  • Abstract
    This paper introduces a simulator that allows analyzing the radiation induced errors on memory devices. The simulator takes all the radiation effects on SRAM into account and can be easily tuned on the base of data gained during radiation experiments and/or presented in literature. We also present a case study application in which the proposed simulator is used to validate a low-cost hardware platform for soft error detection in avionic environment by the mean of atmospheric balloons in the context of HAMLET project.
  • Keywords
    SRAM chips; fault simulation; radiation hardening (electronics); SRAM; memory devices; memory fault simulator; radiation-induced effects; soft error detection; Atmospheric measurements; Circuit faults; Decoding; Integrated circuit modeling; Neutrons; Random access memory; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Test Symposium (ATS), 2010 19th IEEE Asian
  • Conference_Location
    Shanghai
  • ISSN
    1081-7735
  • Print_ISBN
    978-1-4244-8841-4
  • Type

    conf

  • DOI
    10.1109/ATS.2010.26
  • Filename
    5692230
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2168869