Title :
A Memory Fault Simulator for Radiation-Induced Effects in SRAMs
Author :
Rech, P. ; Bosio, A. ; Girard, P. ; Pravossoudovitch, S. ; Virazel, A. ; Dilillo, L.
Author_Institution :
LIRMM, Univ. Montpellier 2, Montpellier, France
Abstract :
This paper introduces a simulator that allows analyzing the radiation induced errors on memory devices. The simulator takes all the radiation effects on SRAM into account and can be easily tuned on the base of data gained during radiation experiments and/or presented in literature. We also present a case study application in which the proposed simulator is used to validate a low-cost hardware platform for soft error detection in avionic environment by the mean of atmospheric balloons in the context of HAMLET project.
Keywords :
SRAM chips; fault simulation; radiation hardening (electronics); SRAM; memory devices; memory fault simulator; radiation-induced effects; soft error detection; Atmospheric measurements; Circuit faults; Decoding; Integrated circuit modeling; Neutrons; Random access memory; Transistors;
Conference_Titel :
Test Symposium (ATS), 2010 19th IEEE Asian
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-8841-4
DOI :
10.1109/ATS.2010.26
