Title :
Highly reliable 1 Mbit ferroelectric memories with newly developed BLT thin films and steady integration schemes
Author :
Yang, B. ; Kang, Y.M. ; Lee, S.S. ; Noh, K.H. ; Kim, N.K. ; Yeom, S.J. ; Kang, N.S. ; Yoon, H.G.
Author_Institution :
Memory R & D Div., Hynix Semicond. Inc., Kyongki, South Korea
Abstract :
Highly reliable packaged 1 Mbit ferroelectric memories with 0.35 /spl mu/m CMOS ensuring ten-year retention and imprint at 175/spl deg/C have been successfully developed for the first time. These excellent reliabilities have resulted from newly developed BLT ferroelectric films with superior performance and steady integration schemes free from attacks of process impurities.
Keywords :
CMOS memory circuits; barium compounds; ferroelectric storage; ferroelectric thin films; integrated circuit reliability; lanthanum compounds; (BiLa)/sub 4/Ti/sub 3/O/sub 12/; 0.35 micron; 1 Mbit; 175 C; BLT thin film; CMOS integration process; ferroelectric memory; reliability; Capacitors; Dielectrics; Electrodes; Ferroelectric films; Ferroelectric materials; Impurities; Nonvolatile memory; Packaging; Random access memory; Transistors;
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
DOI :
10.1109/IEDM.2001.979633
