0.1 /spl mu/m-rule MRAM development using double-layered hard mask

Author

Tsuji, K. ; Suemitsu, K. ; Mukai, T. ; Nagahara, K. ; Masubuchi, H. ; Utsumi, H. ; Kikuta, K.

Author_Institution

Silicon Syst. Labs., NEC Corp., Kanagawa, Japan

fYear

2001

fDate

2-5 Dec. 2001

Abstract

0.1 /spl mu/m rule magnetic random access memory (MRAM) was developed using double-layered hard mask of SiO/sub 2//metal. 30% magnetoresistance ratio under switching operation, read and write characteristics for MRAM cell with 0.1/spl times/0.6 /spl mu/m/sup 2/ were observed using current induced magnetic field. It is found that switching current of tunneling magnetoresistance (TMR) device with 0.1 /spl mu/m length can be reduced by thinning free layer and reduction of TMR aspect ratio.

Keywords

magnetic storage; magnetic switching; magnetoresistive devices; masks; random-access storage; tunnelling; 0.1 micron; SiO/sub 2/; SiO/sub 2//metal double-layered hard mask; aspect ratio; current induced magnetic field; free layer thinning; magnetic random access memory; magnetoresistance ratio; read characteristics; switching current; tunneling magnetoresistance device; write characteristics; Lithography; Magnetic devices; Magnetic fields; Magnetic films; Magnetic switching; Nonvolatile memory; Oxidation; Random access memory; Tin; Tunneling magnetoresistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7050-3

Type

conf

DOI

10.1109/IEDM.2001.979635

Filename

979635