Title :
Reliability of advanced embedded non-volatile memories: The 2T-FNFN device
Author_Institution :
NXP Semicond., Nijmegen
Abstract :
The reliability of advanced embedded non-volatile memories has been discussed using the 2T-FNFN devices example. The write/erase endurance and the data retention are the most important reliability parameters. The intrinsic reliability mechanisms can be addressed through single cell evaluation, while the cell-to-cell variation determines the product level reliability. The cell-to-cell variation can be determined by studying large flash arrays. Furthermore, the reliability challenges coming along with technology scaling are discussed.
Keywords :
circuit reliability; embedded systems; flash memories; memory architecture; random-access storage; 2T-FNFN device; cell-to-cell variation; data retention; embedded nonvolatile memories; flash arrays; intrinsic reliability mechanisms; product level reliability; reliability parameters; single cell evaluation; technology scaling; write/erase endurance; CMOS technology; Character generation; Logic devices; Logic programming; Low voltage; Nonvolatile memory; Semiconductor device reliability; Semiconductor devices; Tunneling; Virtual private networks; Memories; Reliability; Semiconductor device;
Conference_Titel :
Integrated Circuit Design and Technology and Tutorial, 2008. ICICDT 2008. IEEE International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-1810-7
Electronic_ISBN :
978-1-4244-1811-4
DOI :
10.1109/ICICDT.2008.4567251
