Title :
OUM - A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications
Author :
Lai, S. ; Lowrey, T.
Author_Institution :
Intel Corp., Santa Clara, CA, USA
Abstract :
This paper discusses the development status of the memory cell element of OUM (Ovonic Unified Memory) - a chalcogenide-based, phase-change nonvolatile semiconductor memory technology at the 180 nm technology node. The device structure and characterization of the memory element will be reviewed. The key characteristics of the technology will be discussed for ultra-high density, low voltage, high-speed programming, high cycle count, high read speed, and competitive cost structure nonvolatile memory for stand alone and embedded applications. This technology is inherently radiation resistant and is bit byte or word programmable without the requirement of Flash-like block erase. Low voltage and energy operation make OUM an attractive candidate for mobile applications.
Keywords :
chalcogenide glasses; low-power electronics; semiconductor storage; 180 nm; OUM; Ovonic Unified Memory; chalcogenide semiconductor; embedded applications; mobile applications; nonvolatile memory cell element technology; phase change material; radiation resistance; stand alone applications; ultra-high-density low-voltage high-speed programming; CMOS logic circuits; CMOS process; CMOS technology; Costs; Logic devices; Low voltage; Nonvolatile memory; Phase change materials; Phased arrays; Random access memory;
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
DOI :
10.1109/IEDM.2001.979636
