• DocumentCode
    2168949
  • Title

    [Title page]

  • fYear
    2009
  • fDate
    10-14 May 2009
  • Abstract
    The following topics are dealt with: nonvolatile memory devices; storage devices; nonstoichiometric films; thermal stability; thermal oxidation; fully CMOS compatible WOx resistive random access memory (RRAM); hybrid redox molecular/silicon field-effect memory devices; resistive switching memory device; reliability; NiO-based resistive switching memory elements; dynamic random access memory (DRAM); flash memories; embedded nonvolatile memory; phase change memory; nanocrystal memories; and advance dielectrics.
  • Keywords
    DRAM chips; field effect memory circuits; flash memories; oxidation; phase change memories; random-access storage; reduction (chemical); reliability; stoichiometry; thermal stability; NiO-based resistive switching memory elements; advance dielectrics; dynamic random access memory; embedded nonvolatile memory; flash memory; fully CMOS compatible WOx resistive random access memory; hybrid redox molecular-silicon field effect memory devices; nanocrystal memory; nonstoichiometric films; nonvolatile memory devices; phase change memory; reliability; resistive switching memory device; storage devices; thermal oxidation; thermal stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Memory Workshop, 2009. IMW '09. IEEE International
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    978-1-4244-3762-7
  • Type

    conf

  • DOI
    10.1109/IMW.2009.5090565
  • Filename
    5090565
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2168949