DocumentCode :
2168979
Title :
SOI chip design and charging damage
Author :
Hook, Terence B.
Author_Institution :
IBM Microelectron., Essex Junction, VT
fYear :
2008
fDate :
2-4 June 2008
Firstpage :
83
Lastpage :
86
Abstract :
In this paper we discuss some aspects of antennas in real designs in SOI technology, and show how the concepts manifest themselves in actual chips, where second-order effects such as resistance and the details of the processing sequence can play an important role. We also discuss the ramifications of a more recent technique which inserts bulk contacts into the SOI design, thereby imposing a bulk-like character to the antenna rules, while maintaining the performance advantages of SOI.
Keywords :
antennas; silicon-on-insulator; SOI chip design; SOI technology; bulk devices; bulk technology; charging damage; circuit design; insulating oxide layer; wafer bulk; Antennas and propagation; Chip scale packaging; Circuit simulation; Circuit synthesis; Electrons; Insulation; Integrated circuit interconnections; Isolation technology; Microelectronics; Paper technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Circuit Design and Technology and Tutorial, 2008. ICICDT 2008. IEEE International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-1810-7
Electronic_ISBN :
978-1-4244-1811-4
Type :
conf
DOI :
10.1109/ICICDT.2008.4567252
Filename :
4567252
Link To Document :
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