DocumentCode :
2169032
Title :
Built-In Self-Test for Capacitive MEMS Using a Charge Control Technique
Author :
Basith, Iftekhar Ibne ; Kandalaft, Nabeeh ; Rashidzadeh, Rashid
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Windsor, Windsor, ON, Canada
fYear :
2010
fDate :
1-4 Dec. 2010
Firstpage :
135
Lastpage :
140
Abstract :
A new Built-in Self-Test (BIST) method for capacitive Micro-Electrical-Mechanical System (MEMS) devices using charge-control method has been developed in which the Device Under Test (DUT) is stimulated through current sources. The DUT output signals are first converted to time domain intervals and then measured through a precision Time-to-Digital converter (TDC). The proposed BIST scheme supports self-calibration and produces robust results under process, supply and temperature variations. Simulation results indicate that this method can successfully detect minor structural defects altering the MEMS nominal capacitance by 70af.
Keywords :
analogue-digital conversion; built-in self test; calibration; capacitive sensors; micromechanical devices; MEMS nominal capacitance; built-in self-test; capacitive MEMS; charge control technique; device under test; microelectrical-mechanical system; self-calibration; time-to-digital converter; Built-in self-test; Calibration; Capacitance; Capacitors; Delay; Delay lines; Micromechanical devices; built-in self-test; device under test; test for MEMS; time-to-digital converter;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Test Symposium (ATS), 2010 19th IEEE Asian
Conference_Location :
Shanghai
ISSN :
1081-7735
Print_ISBN :
978-1-4244-8841-4
Type :
conf
DOI :
10.1109/ATS.2010.32
Filename :
5692236
Link To Document :
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