Title :
W-Band GaAs HEMT MMIC Subharmonically Pumped Diode Mixers with 20 GHz IF Bandwidth
Author :
Hwang, Yuh-Jing ; Wang, Huei ; Chu, Tah-Hsiung
Author_Institution :
Department of Communication Engineering and Department of Electrical Engineering, National, Taiwan University, 1 Roosevelt Rd., Sec. 4, Taipei, 106, Taiwan, R.O.C.; Academia Sinica Institute of Astronomy & Astrophysics, P.O. Box 23-141, Taipei, 106, Taiwa
Abstract :
Two subharmonically pumped (SHP) diode mixers are designed for wideband W-band RF frequencies, fixed LO frequency operation. These mixers are fabricated on a 4-mil substrate using 0.1-¿m GaAs MMIC process. Both simulation and test results show that the mixers are with 12.25 and 11.75 dB average conversion losses, respectively. Both mixers have IF bandwidth wider than 20 GHz. The conversion loss flatness of the symmetric circuit is within ±1.25 dB. To our knowledge, these are the state-of-the-art result on low-conversion-loss wideband MMIC SHP diode mixers.
Keywords :
Bandwidth; Circuit simulation; Circuit testing; Diodes; Gallium arsenide; HEMTs; MMICs; Mixers; Radio frequency; Wideband;
Conference_Titel :
Microwave Conference, 2002. 32nd European
Conference_Location :
Milan, Italy
DOI :
10.1109/EUMA.2002.339228
