Title :
3-D Stacked NAND Flash String with Tube Channel Structure Using Si and SiGe Selective Etch Process
Author :
Jeong, Min-Kyu ; Kwon, Hyuck-In ; Lee, Jong-Ho
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Kyungpook Nat. Univ., Daegu
Abstract :
A new vertical NAND flash string with tube channel structure and top source contact has been proposed. The DC and program/erase characteristics of the proposed transistor is investigated using a 3-D TCAD simulation tool. This work is expected to show better P/E, retention, and reliability characteristics than Toshiba´s structure.
Keywords :
CAD; Ge-Si alloys; NAND circuits; elemental semiconductors; etching; flash memories; integrated memory circuits; silicon; transistors; DC characteristics; NAND flash string; Si selective etch process; Si-SiGe; SiGe selective etch process; program-erase characteristics; reliability; retention characteristics; three-dimensional TCAD simulation tool; three-dimensional stacked NAND string; top source contact; transistor; tube channel structure; Character generation; Computer science; Costs; Electron tubes; Etching; Germanium silicon alloys; Lithography; Silicon germanium; Stacking; Tunneling;
Conference_Titel :
Memory Workshop, 2009. IMW '09. IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-3762-7
DOI :
10.1109/IMW.2009.5090571
