Title :
Investigations of stress sensitivity of 0.12 CMOS technology using process modeling
Author :
Senez, V. ; Hoffmann, T. ; Robilliart, E. ; Bouche, G. ; Jaouen, H. ; Lunenborg, M. ; Carnevale, G.
Author_Institution :
IEMN-ISEN, CNRS, Villeneuve d´Ascq, France
Abstract :
This paper presents a mechanical analysis of the entire process flow (i.e.: Front (FEOL) and Back (BEOL) End of Line) of a 0.12 CMOS technology using 2D numerical modeling. This study gives several quantitative modifications concerning the process conditions and device geometries in order to reduce the residual mechanical stress in the devices.
Keywords :
CMOS integrated circuits; calibration; elemental semiconductors; integrated circuit modelling; silicon; stress analysis; 0.12 micron; 2D numerical modeling; CMOS technology; IMPACT; SACOX; Si-SiO/sub 2/; back end of line; front end of line; mechanical analysis; CMOS process; CMOS technology; Geometry; Integrated circuit modeling; Mechanical factors; Numerical models; Residual stresses; Rheology; Semiconductor device modeling; Strain measurement;
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
DOI :
10.1109/IEDM.2001.979642
