Title :
Modeling the nucleation and evolution of end of range dislocation loops in silicon
Author :
Avci, I. ; Law, M.E. ; Kuryliw, E. ; Jones, K.S.
Author_Institution :
SWAMP Center, Florida Univ., Gainesville, FL, USA
Abstract :
Amorphization commonly occurs during implantation forming end of range (EOR) defects at the amorphous/crystal line (a/c) interface upon annealing. It is imperative to know how these defects form in order to do predictive simulations of dopants. In this study, we developed a model to predict the EOR defect nucleation and evolution. It is assumed that all the loops come from unfaulted {311}´s. The model is verified with the new experimental results obtained by studying the formation of EOR defects by varying the implant energy from 40 keV to 80 keV at a dose of 2/spl times/10/sup 15/ cm/sup -2/.
Keywords :
dislocation loops; elemental semiconductors; ion implantation; nucleation; semiconductor doping; semiconductor process modelling; silicon; substrates; 40 to 80 keV; EOR defects; Si substrate; amorphization; amorphous/crystal line interface; annealing; defect evolution; defect nucleation; end of range defects; implant energy; ion implantation; Amorphous materials; Annealing; Crystallization; Implants; Ion implantation; Predictive models; Semiconductor device modeling; Semiconductor process modeling; Silicon; Transmission electron microscopy;
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
DOI :
10.1109/IEDM.2001.979643
