Modeling the nucleation and evolution of end of range dislocation loops in silicon

Author

Avci, I. ; Law, M.E. ; Kuryliw, E. ; Jones, K.S.

Author_Institution

SWAMP Center, Florida Univ., Gainesville, FL, USA

fYear

2001

fDate

2-5 Dec. 2001

Abstract

Amorphization commonly occurs during implantation forming end of range (EOR) defects at the amorphous/crystal line (a/c) interface upon annealing. It is imperative to know how these defects form in order to do predictive simulations of dopants. In this study, we developed a model to predict the EOR defect nucleation and evolution. It is assumed that all the loops come from unfaulted {311}´s. The model is verified with the new experimental results obtained by studying the formation of EOR defects by varying the implant energy from 40 keV to 80 keV at a dose of 2/spl times/10/sup 15/ cm/sup -2/.

Keywords

dislocation loops; elemental semiconductors; ion implantation; nucleation; semiconductor doping; semiconductor process modelling; silicon; substrates; 40 to 80 keV; EOR defects; Si substrate; amorphization; amorphous/crystal line interface; annealing; defect evolution; defect nucleation; end of range defects; implant energy; ion implantation; Amorphous materials; Annealing; Crystallization; Implants; Ion implantation; Predictive models; Semiconductor device modeling; Semiconductor process modeling; Silicon; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7050-3

Type

conf

DOI

10.1109/IEDM.2001.979643

Filename

979643