Title :
Ge2Sb2Te5 thin film doped with silver [optical disc storage]
Author :
Lie, C.T. ; Kuo, P.C. ; Wu, T.H. ; Chen, P.-W.
Author_Institution :
Inst. of Mater. Sci. & Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
The reflectivity and thermal properties are the main problems in GeSbTe phase-change disks that must be improved (N. Nobukuni et al., J. Appl. Phys. vol. 78, p. 6980, 1995; A. Hirotsune et al., Jpn. J. Appl. Phys. vol. 35, p. 346, 1996; C.M. Lee et al., J. Appl. Phys. vol. 89, p. 3290, 2001; S.Y. Kim et al., Jpn. J. Appl. Phys. vol. 38, p. 1713, 1997). We found that a small amount of Ag addition to the Ge2Sb2Te5 film can increase the reflectivity, crystalline temperature, and the fcc to hcp phase-transition temperature. In addition, the activity energy of the amorphous to fcc phase transition was decreased.
Keywords :
antimony compounds; crystallisation; doping profiles; germanium compounds; optical disc storage; optical films; reflectivity; silver; thermal analysis; Ag addition; Ge2Sb2Te5:Ag; GeSbTe phase-change disk; activity energy; amorphous to fcc phase-transition; crystalline temperature; fcc to hcp phase-transition temperature; optical disc storage; reflectivity; silver doped Ge2Sb2Te5 thin film; thermal properties; Amorphous materials; Annealing; Crystallization; Optical films; Reflectivity; Silver; Sputtering; Temperature; Transistors; Wavelength measurement;
Conference_Titel :
Optical Memory and Optical Data Storage Topical Meeting, 2002. International Symposium on
Print_ISBN :
0-7803-7379-0
DOI :
10.1109/OMODS.2002.1028619
