A Systematic Investigation of TiN/CuxO/Cu RRAM with Long Retention and Excellent Thermal Stability

Author

Zhou, P. ; Wan, H.J. ; Song, Y.L. ; Yin, M. ; Lv, H.B. ; Lin, Y.Y. ; Song, S. ; Huang, R. ; Wu, J.G. ; Chi, M.H.

Author_Institution

State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai

fYear

2009

fDate

10-14 May 2009

Firstpage

1

Lastpage

2

Abstract

The long retention, more than 10 years at 85degC, and excellent thermal reliability memory of TiN-Cu_xO-Cu (with TiN cap layer as top electrode) is reported. TiN cap layer results in more stable reset from low resistance state (LRS) to high resistance state (HRS) under positive pulse and SET under negative pulse, which is beneficial for providing large programming current or voltage on the resistive random access memory (RRAM) resistor connected in series with a select transistor. Results show that the structure of TiN-Cu_xO-Cu with its compatibility to CMOS technology appears a promising memory device for embedded application.

Keywords

CMOS integrated circuits; copper; copper compounds; electrodes; random-access storage; thermal stability; titanium compounds; CMOS technology; TiN-Cu_xO-Cu; high resistance state; low resistance state; programming current; resistive random access memory resistor; thermal reliability memory; thermal stability; top electrode; CMOS technology; Electrodes; Fabrication; Plasma measurements; Pulse measurements; Sputtering; Temperature; Thermal stability; Tin; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop, 2009. IMW '09. IEEE International

Conference_Location

Monterey, CA

Print_ISBN

978-1-4244-3762-7

Type

conf

DOI

10.1109/IMW.2009.5090577

Filename

5090577