Title :
ALD-Al2O3 as an Inter-Poly Dielectric for a Product Demonstrator in a Proven eFlash Technology
Author :
Shum, D. ; Jaschke, G. ; Canning, M. ; Kakoschke, R. ; Duschl, R. ; Sikorski, R. ; Erler, F. ; Stiftinger, M. ; Duch, A. ; Power, J.R. ; Tempel, G. ; Strenz, R. ; Allinger, R.
Author_Institution :
Infineon Technol. Dresden GmbH, Dresden
Abstract :
We present aluminum oxide (AI2O3) as high-k Inter-Poly Dielectric (IPD) in a proven 0.13 mum based embedded Flash (eFlash) technology. Full functionality has been demonstrated from a 400Kbyte product demonstrator for the first time published so far. The AI2O3 layer was formed through Atomic-Layer Deposition (ALD) and the influence of parameters such as precursor, deposition temperature, feed-time and Si content on the product functionality have been determined systematically. Vigorous industrial reliability assessment was conducted throughout and promising retention and endurance have been shown. The results demonstrate AI2O3 IPD readiness for eFlash products without additional integration issues or yield degradation.
Keywords :
aluminium compounds; atomic layer deposition; flash memories; high-k dielectric thin films; reliability; Al2O3; atomic layer deposition; eFlash products; embedded flash technology; endurance; high-k inter-poly dielectric; industrial reliability assessment; product demonstrator; retention; size 0.13 mum; Aluminum oxide; CMOS technology; Circuits; Costs; High K dielectric materials; High-K gate dielectrics; Oxidation; Semiconductor films; Temperature; Water;
Conference_Titel :
Memory Workshop, 2009. IMW '09. IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-3762-7
DOI :
10.1109/IMW.2009.5090578
