DocumentCode :
2169329
Title :
Design and Calculation of Micromachined Silicon Condenser Microphone with Free Floating Diaphragm and Gold Backplate
Author :
Dong, Jian ; Ji, Shiming ; Zhang, Libin
Author_Institution :
MOE Key Lab. of Mech. Manuf. & Autom., Zhejiang Univ. of Technol., Hangzhou
fYear :
2008
fDate :
12-15 Oct. 2008
Firstpage :
83
Lastpage :
88
Abstract :
A micromachined condenser microphone with a free floating sensing diaphragm and a perforated thick gold backplate is presented. The diaphragm consists of a heavily doped layer of polycrystalline silicon and two layers of low stress silicon nitride. It is fabricated using low-pressure chemical vapor deposition (LPCVD). One end of rectangled sensing diaphragm sticks on silicon substrate while the other parts float from substrate, so that the intrinsic stress of diaphragm can be released. The gold backplate is fabricated using a photoresist-molded electroplating technology and perforated with circular vent holes. Perforated circular holes on backplate are laid out as hexagon to adjust air-gap damping between diaphragm and backplate to critical damping. Calculation and analysis show that the microphone has the open-circuit sensitivity of 13.78 mv/Pa at 5 V bias voltage reaches, the pull-in voltage of 31.85 V and the frequency bandwidth ranging from 0 to 142.3 KHz. All these performances of microphone can meet with the requirements of consumers.
Keywords :
chemical vapour deposition; diaphragms; micromachining; microphones; air-gap damping; bandwidth 0 kHz to 142.3 kHz; circular vent holes; free floating sensing diaphragm; frequency bandwidth; intrinsic stress; low pressure chemical vapor deposition; micromachined silicon condenser microphone; open-circuit sensitivity; perforated circular holes; perforated thick gold backplate; photoresist-molded electroplating technology; polycrystalline silicon; rectangled sensing diaphragm; silicon nitride; silicon substrate; voltage 31.85 V; voltage 5 V; Air gaps; Chemical technology; Chemical vapor deposition; Damping; Gold; Microphones; Silicon; Stress; Vents; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Mechtronic and Embedded Systems and Applications, 2008. MESA 2008. IEEE/ASME International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2367-5
Electronic_ISBN :
978-1-4244-2368-2
Type :
conf
DOI :
10.1109/MESA.2008.4735709
Filename :
4735709
Link To Document :
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