Title :
Approaching the Information Theoretical Bound of Multi-Level NAND Flash Memory Storage Efficiency
Author :
Li, Shu ; Zhang, Tong
Author_Institution :
ECSE Dept., Rensselaer Polytech. Inst., Troy, NY
Abstract :
This paper applies information theory to formulate and estimate the NAND flash memory storage efficiency bound, and shows a big gap between the theoretical bound and what is achievable today. We further present two techniques to reduce the gap and demonstrate their promising potential using 2 bits/cell NAND flash memories as a test vehicle.
Keywords :
NAND circuits; flash memories; multivalued logic circuits; information theory; multilevel NAND flash memory storage efficiency; storage efficiency bound; Bit error rate; Channel capacity; Communication channels; Entropy; Error correction codes; Fault tolerance; Information theory; Interference; Testing; Vehicles;
Conference_Titel :
Memory Workshop, 2009. IMW '09. IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-3762-7
DOI :
10.1109/IMW.2009.5090580
