Title :
Both NOR and NAND Embedded Hybrid Flash for S-SIM Application Using 90 nm Process Technology
Author :
Han, Jeong-Uk ; Lee, Yong Kyu ; Jeon, Chang Min ; Ryu, Jido ; Hong, Eun-Mi ; Yang, Seungjin ; Kim, Youngho ; Yang, Hyucksoo ; Yoo, Hyunkhe ; Yu, Jaemin ; Bang, Hoonjin ; Lee, ByeongHoon ; Lee, Daesop ; Daesop Lee ; Jung, Eunseung ; Chung, Chilhee
Author_Institution :
C&M PA, Samsung Electron. Co., Yongin
Abstract :
We have firstly demonstrated a hybrid flash including both NOR and NAND cell in a single chip using 90 nm logic technology for S-SIM (Super-Subscriber Identity Module) application. The memory sizes are 16 MB NAND and 768 kB NOR flash, respectively. The flash memory cells exhibited over 10 k-cycle endurance and 10-year retention for the successful smart card application.
Keywords :
NAND circuits; NOR circuits; embedded systems; flash memories; nanoelectronics; smart cards; NAND embedded hybrid flash memory cell; NOR embedded hybrid flash memory cell; S-SIM application; k-cycle endurance; logic technology; memory size 16 MByte; memory size 768 KByte; size 90 nm; smart card application; super-subscriber identity module; Application specific integrated circuits; CMOS technology; Electronic equipment testing; Hybrid integrated circuits; Integrated circuit testing; Large scale integration; Mobile handsets; Smart cards; System testing; Voltage;
Conference_Titel :
Memory Workshop, 2009. IMW '09. IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-3762-7
DOI :
10.1109/IMW.2009.5090582
