• DocumentCode
    2169444
  • Title

    Process variability-induced timing failures— A challenge in nanometer CMOS low-power design

  • Author

    Zhang, Xiaonan ; Bai, Xiaoliang

  • Author_Institution
    Qualcomm Inc., San Diego, CA
  • fYear
    2008
  • fDate
    2-4 June 2008
  • Firstpage
    159
  • Lastpage
    162
  • Abstract
    This paper studies the impact of intra-die random variability on low-power digital circuit designs, specifically, circuit timing failures due to intra-die variability. We identify a new low-Vdd statistical failure mode that is strongly supply-voltage dependent and also introduce a simple yet novel method for quantifying the effects of process variability on digital timing - a delay overlapping stage (DOS) chart. We propose a circuit design optimization and verification methodology that considers process variability.
  • Keywords
    CMOS digital integrated circuits; delay circuits; low-power electronics; network synthesis; timing; circuit design optimization; delay overlapping stage chart; digital timing; intradie random variability; low-power digital circuit designs; nanometer CMOS low-power design; process variability-induced timing failures; verification methodology; CMOS process; CMOS technology; Circuit synthesis; Delay; Digital circuits; Inverters; Robustness; Semiconductor device modeling; Threshold voltage; Timing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Circuit Design and Technology and Tutorial, 2008. ICICDT 2008. IEEE International Conference on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    978-1-4244-1810-7
  • Electronic_ISBN
    978-1-4244-1811-4
  • Type

    conf

  • DOI
    10.1109/ICICDT.2008.4567269
  • Filename
    4567269