Title :
A very high efficiency silicon bipolar transistor
Author :
Carrara, F. ; Scuderi, A. ; Tontodonato, G. ; Palmisano, G.
Author_Institution :
Facolta di Ingegneria, Catania Univ., Italy
Abstract :
The potential of a high-performance low-cost silicon bipolar technology for high-efficiency low-voltage RF power amplifiers was explored. To this end, a unit power cell was developed by optimizing layout design, collector thickness and doping level. On-wafer load-pull measurements were performed which showed an excellent power-added efficiency of 83% at 1.8 GHz under a supply voltage of 2.7 V. Additionally, a 1-W output power and a 74% PAE were achieved by a multi-cell packaged device with on-board testing.
Keywords :
UHF bipolar transistors; UHF power amplifiers; elemental semiconductors; low-power electronics; power bipolar transistors; silicon; 1 W; 1.8 GHz; 2.7 V; 74 percent; 83 percent; Si; collector thickness; doping level; layout design; low-voltage RF power amplifier; multi-cell packaged device; on-board testing; on-wafer load-pull measurement; output power; power-added efficiency; silicon bipolar transistor; unit power cell; Bipolar transistors; Design optimization; Doping; High power amplifiers; Performance evaluation; Power measurement; Radio frequency; Radiofrequency amplifiers; Silicon; Voltage;
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
DOI :
10.1109/IEDM.2001.979654
