A 0.9 V 5 MS/s CMOS D/A converter with multi-input floating-gate MOS

Author

Wong, Louis S Y ; Kwok, Chee Y. ; Rigby, Graham A.

Author_Institution

Sch. of Electr. Eng., New South Wales Univ., Sydney, NSW, Australia

fYear

1997

fDate

5-8 May 1997

Firstpage

305

Lastpage

308

Abstract

An ultra low voltage, low power CMOS D/A converter using a simple multi-input floating-gate MOSFET to perform the dual function of current source and current switch is described. The outcome of this approach is very low supply voltage operation and yet maintaining high conversion accuracy. An experimental 6-bit D/A converter has been fabricated in a standard 1.2 μm CMOS technology with V_th≈0.9 V and occupies 0.63 mm² active area. Measurement shows a single 0.9 V supply is sufficient to operate this converter, with less than 0.46 LSB linearity error, 5 MS/s conversion rate and 320 μW power dissipation

Keywords

CMOS integrated circuits; digital-analogue conversion; 0.9 V; 1.2 micron; 320 muW; 6 bit; CMOS D/A converter; current source function; current switch function; high conversion accuracy; low power DAC; multi-input floating-gate MOSFET; ultra low voltage; Australia; CMOS process; CMOS technology; Latches; Linearity; Low voltage; MOSFET circuits; Matrix converters; Power dissipation; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 1997., Proceedings of the IEEE 1997

Conference_Location

Santa Clara, CA

Print_ISBN

0-7803-3669-0

Type

conf

DOI

10.1109/CICC.1997.606635

Filename

606635