Title :
Trenched sinker LDMOSFET (TS-LDMOS) structure for high power amplifier application above 2 GHz
Author :
Cheon Soo Kim ; Joung-Woo Park ; Hyun Kyu Yu
Author_Institution :
Microelec. Tech. Lab., ETRI, Taejon, South Korea
Abstract :
New trenched sinker LDMOSFET structure is proposed for the application of high power RF amplifier. By adopting low temperature deep trench technology, the sinker area can be shrunk down more than 70% compared with the conventional diffusion type. The RF performance of proposed device with channel width of 5 mm showed a small signal gain of 19.3 dB at 2 GHz and 14.8 dB at 3 GHz, and maximum peak power of 30 dBm at V/sub DD/ of 26 V. Furthermore, the trench sinker (or guard), that is applied to suppress the coupling between inductors, also showed a excellent blocking performance at frequency range from 0.5 GHz to 20 GHz.
Keywords :
MOS integrated circuits; MOSFET; interference suppression; isolation technology; power amplifiers; 0.5 GHz to 20 GHz; 0.5 to 20 GHz; 14.8 dB; 19.3 dB; 2 GHz; 26 V; 3 GHz; channel width 5 mm; high power RF amplifier; low temperature deep trench technology; maximum peak power 30 dBm; signal gain 14.8 dB; signal gain 19.3 dB; trenched sinker LDMOSFET structure; Base stations; Fabrication; High power amplifiers; Inductors; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Space technology; Substrates; Temperature;
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
DOI :
10.1109/IEDM.2001.979655
