DocumentCode
2169512
Title
A partial SOI technology for single-chip RF power amplifiers
Author
Jun Cai ; Changhong Ren ; Liang, Yung C. ; Sin, Johnny K. O.
Author_Institution
Inst. of Microelectron., Singapore, Singapore
fYear
2001
fDate
2-5 Dec. 2001
Abstract
The technology of forming partial SOI (silicon on insulator) platform on conventional bulk wafer is proposed. RF LDMOS devices with high power-added efficiency and onchip high-Q value micro-inductors were fabricated for 2 GHz power amplifier applications by using the proposed technology. Devices were verified by the laboratory measurement results.
Keywords
CMOS integrated circuits; inductors; integrated circuit technology; microwave integrated circuits; power amplifiers; silicon-on-insulator; 2 GHz; GHz power amplifier; RF LDMOS devices; Si; efficiency; onchip high-Q value micro-inductors; partial SOI; portable wireless application; High power amplifiers; Inductors; Power amplifiers; Power generation; Q factor; Radio frequency; Radiofrequency amplifiers; Senior members; Silicon on insulator technology; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-7050-3
Type
conf
DOI
10.1109/IEDM.2001.979656
Filename
979656
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