Author :
Fantini, A. ; Perniola, L. ; Armand, M. ; Nodin, J.F. ; Sousa, V. ; Persico, A. ; Cluzel, J. ; Jahan, C. ; Maitrejean, S. ; Lhostis, S. ; Roule, A. ; Dressler, C. ; Reimbold, G. ; De Salvo, B. ; Mazoyer, P. ; Bensahel, D. ; Boulanger, F.
Abstract :
This work presents a thorough comparative assessment of undoped GST and GeTe active phase-change (PC) materials for application to embedded memory devices (in particular consumer and automotive products). The material screening and qualification is performed through optical reflectivity and 4-probes resistivity measurements. Electrical performances are then investigated through tests of lance-cell analytical PC memory cells. Reset current densities of GST and GeTe are comparable, while GeTe data-retention at high- temperature is significantly improved compared to GST, suggesting that GeTe-based compounds are promising candidates for embedded PC memory applications.
Keywords :
IV-VI semiconductors; antimony compounds; current density; germanium compounds; phase change materials; phase change memories; reflectivity; semiconductor thin films; Ge2Sb2Te5; GeTe; GeTe-based compounds; active phase-change materials; current density; embedded phase-change memory devices; four probe resistivity measurement; lance-cell analytical PC memory cells; optical reflectivity; Automotive engineering; Conductivity measurement; Current density; Optical materials; Performance analysis; Performance evaluation; Phase change memory; Qualifications; Reflectivity; Testing;
