Title :
Base current tuning in SiGe HBT´s by SiGe in the emitter
Author :
Huizing, H.G.A. ; Klootwijk, J.H. ; Aksen, E. ; Slotboom, J.W.
Abstract :
Npn-type SiGe heterojunction bipolar transistors (HBT´s) have high cut-off frequencies, but low breakdown voltages due to their high current gain. We show that a SiGe layer in the emitter can increase the base current and hence the breakdown voltage while the collector current and cut-off frequency are not reduced. Simulations and first experimental results clearly confirm this effect.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; millimetre wave bipolar transistors; semiconductor device breakdown; semiconductor materials; 2.6 V; SiGe HBT; SiGe heterojunction bipolar transistors; base current tuning; breakdown voltages; collector current; cutoff frequencies; emitter SiGe layer; high current gain; n-p-n type; Cutoff frequency; Doping profiles; Germanium silicon alloys; Heterojunction bipolar transistors; Optical fiber networks; Performance evaluation; Silicon germanium; Spontaneous emission; Stimulated emission; Testing;
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
DOI :
10.1109/IEDM.2001.979658
