A Heterojunction Bipolar Transistor Large-signal Model Focused on the Saturation Region

Author

Kang, Jongchan ; Yang, Youngoo ; Kim, Sungwoo ; Kim, Bumman

Author_Institution

Department of Electronic and Electrical Engineering and Microwave Application Research Center, Pohang University of Science and Technology, Pohang, Kyungbuk, 790-784, Korea. kjc815@postech.ac.kr

fYear

2002

fDate

23-26 Sept. 2002

Firstpage

1

Lastpage

4

Abstract

We present a new large signal model of HBT for accurately fitting IC-VCE curves at the saturation region. Because of the highly doped base of HBT, the collector is high-level injected in the region. This model treats the high-level injected collector as an effective base width widening and the saturation current terms of Ebers-Moll model are modified accordingly. A new empirical function is used to describe the base width variation. The simulation results using the model follow the measured IC-VCE curves at the saturation region very well. For verification, this model is applied to a multi-finger HBT and load-pull simulation results based on the model are compared with measured ones.

Keywords

Circuit simulation; Curve fitting; Diodes; Electrical resistance measurement; Equations; Equivalent circuits; Gallium arsenide; Heterojunction bipolar transistors; Microwave technology; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2002. 32nd European

Conference_Location

Milan, Italy

Type

conf

DOI

10.1109/EUMA.2002.339247

Filename

4140327