Title :
Dual Layer Pt Metal Nanocrystal Flash for Multi-Level-Cell NAND Application
Author :
Singh, Pawan K. ; Bisht, Gaurav ; Hofmann, Ralf ; Hofmann, R. ; Mahapatra, Souvik
Author_Institution :
Dept. of Electr. Eng., IIT Bombay, Mumbai
Abstract :
Most of the current high-density Flash cells use multi-level-cell (MLC) technology to store 2-bits/cell to increase memory density. In this work, dual layer metal nanocrystal (NC) flash EEPROM device, with large memory window, good retention and 104 cycle endurance is reported. High-temperature retention, gate bias accelerated retention, read disturb and post- cycling retention measurements show excellent reliability of the NC devices which make them suitable for the MLC application.
Keywords :
flash memories; nanoelectronics; nanostructured materials; platinum; reliability; EEPROM; Pt; dual layer metal nanocrystal flash; gate bias accelerated retention; high-density Flash cells; memory density; read disturb; reliability; Acceleration; Aluminum oxide; Character generation; EPROM; Electric breakdown; Electrons; Fabrication; Nanocrystals; Nonvolatile memory; Voltage;
Conference_Titel :
Memory Workshop, 2009. IMW '09. IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-3762-7
DOI :
10.1109/IMW.2009.5090587
