DocumentCode :
2169834
Title :
Real-time neutron and alpha soft-error rate testing of CMOS 130nm SRAM: Altitude versus underground measurements
Author :
Autran, J.L. ; Roche, P. ; Sauze, S. ; Gasiot, G. ; Munteanu, D. ; Loaiza, P. ; Zampaolo, M. ; Borel, J.
Author_Institution :
CNRS, Aix-Marseille Univ., Aix-en-Provence
fYear :
2008
fDate :
2-4 June 2008
Firstpage :
233
Lastpage :
236
Abstract :
This work reports real-time soft-error rate (SER) testing of semiconductor static memories in both altitude and underground environments to separate the component of the SER induced by the cosmic rays (i.e. primarily by atmospheric neutrons) from that caused by on-chip radioactive impurities (alpha-particle emitters). Two European dedicated sites were used to perform long-term real-time measurements with the same setup: the Altitude SEE Test European Platform (ASTEP) at the altitude of 2252 m and the underground laboratory of Modane (LSM, CEA-CNRS) under 1700 m of rock (4800 meters water equivalent). Experimental data obtained using 3.6 Gbit of SRAMs manufactured in CMOS 130 nm technology are reported and analyzed. Comparison with accelerated and simulated SER is also discussed.
Keywords :
CMOS digital integrated circuits; SRAM chips; integrated circuit testing; radiation hardening (electronics); Altitude SEE Test European Platform; CMOS SRAM; alpha-particle emitters; altitude-underground measurements; cosmic rays; onchip radioactive impurities; real-time neutron-alpha soft-error rate testing; semiconductor static memory testing; size 130 nm; soft-error rate; Atmospheric measurements; CMOS technology; Cosmic rays; Laboratories; Manufacturing; Neutrons; Performance evaluation; Random access memory; Semiconductor device testing; Semiconductor impurities; SER simulation; Single-Event Rate (SER); accelerated tests; alpha contamination; atmospheric neutrons; neutron-induced SER; real-time testing; static memory; terrestrial radiation environment;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Circuit Design and Technology and Tutorial, 2008. ICICDT 2008. IEEE International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-1810-7
Electronic_ISBN :
978-1-4244-1811-4
Type :
conf
DOI :
10.1109/ICICDT.2008.4567284
Filename :
4567284
Link To Document :
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