Title :
The Test Ability of an Adaptive Pulse Wave for ADC Testing
Author :
Sheng, Xiaoqin ; Kerkhoff, Hans G.
Author_Institution :
CTIT-TDT Group, Univ. of Twente, Enschede, Netherlands
Abstract :
In the conventional ADC production test method, a high-quality analogue sine wave is applied to the Analogue-to-Digital Converter (ADC), which is expensive to generate. Nowadays, an increasing number of ADCs are integrated into a system-on-chip (SoC) platform design, which usually contains a digital embedded processor. In such a platform, a digital pulse wave is obviously less expensive to generate than an accurate analogue sine wave. As a result, the usage of a digital pulse wave has been investigated to test ADCs as the test stimulus. In this paper, the ability of a digital adaptive pulse wave for ADC testing is presented via the measurement results. Instead of the conventional FFT analysis, a time-domain analysis is exploited for post-processing, from which a signature result can be obtained. This signature can distinguish between faulty devices and the fault-free devices. It is also used in the machine-learning-based test method to predict the dynamic specifications of the ADC. The experimental results of a 12-bit 80 M/s pipelined ADC are shown to evaluate the sensitivity and accuracy of using a pulse wave to test an ADC.
Keywords :
analogue-digital conversion; fast Fourier transforms; integrated circuit design; integrated circuit testing; system-on-chip; time-domain analysis; ADC production test; ADC testing; FFT analysis; SoC platform design; analogue-to-digital converter; digital adaptive pulse wave; digital embedded processor; fault-free devices; faulty devices; high-quality analogue sine wave; machine learning based test; system-on-chip; time-domain analysis; Linearity; Pulse measurements; Signal to noise ratio; Testing; Training; Vehicle dynamics; Voltage measurement; ADC; machine-learning-based; measurement; pulse wave; signature; test;
Conference_Titel :
Test Symposium (ATS), 2010 19th IEEE Asian
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-8841-4
DOI :
10.1109/ATS.2010.56