• DocumentCode
    2169868
  • Title

    Traces of errors due to single ion in floating gate memories

  • Author

    Cellere, G. ; Paccagnella, A. ; Visconti, A. ; Bonanomi, M. ; Harboe-Sorensen, R. ; Virtanen, A.

  • Author_Institution
    Univ. di Padova, Padova
  • fYear
    2008
  • fDate
    2-4 June 2008
  • Firstpage
    237
  • Lastpage
    240
  • Abstract
    Single, high energy, high LET, ions impacting on a Floating gate array at grazing or near-grazing angles lead to the creation of long traces of FGs with corrupted information. Every time a FG is crossed by a single ion, it experiences a charge loss which permanently degrades the stored information. If the ion crosses more than one FG, the threshold voltage of all those FGs interested by its track will be degraded.
  • Keywords
    integrated memory circuits; logic arrays; error trace; floating gate array; floating gate memories; high linear energy transfer; near-grazing angles; single ion; Circuits; Degradation; Error correction; Ion beams; Nonvolatile memory; Random access memory; Research and development; Single event upset; Space technology; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Circuit Design and Technology and Tutorial, 2008. ICICDT 2008. IEEE International Conference on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    978-1-4244-1810-7
  • Electronic_ISBN
    978-1-4244-1811-4
  • Type

    conf

  • DOI
    10.1109/ICICDT.2008.4567285
  • Filename
    4567285
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2169868