Title :
Traces of errors due to single ion in floating gate memories
Author :
Cellere, G. ; Paccagnella, A. ; Visconti, A. ; Bonanomi, M. ; Harboe-Sorensen, R. ; Virtanen, A.
Author_Institution :
Univ. di Padova, Padova
Abstract :
Single, high energy, high LET, ions impacting on a Floating gate array at grazing or near-grazing angles lead to the creation of long traces of FGs with corrupted information. Every time a FG is crossed by a single ion, it experiences a charge loss which permanently degrades the stored information. If the ion crosses more than one FG, the threshold voltage of all those FGs interested by its track will be degraded.
Keywords :
integrated memory circuits; logic arrays; error trace; floating gate array; floating gate memories; high linear energy transfer; near-grazing angles; single ion; Circuits; Degradation; Error correction; Ion beams; Nonvolatile memory; Random access memory; Research and development; Single event upset; Space technology; Threshold voltage;
Conference_Titel :
Integrated Circuit Design and Technology and Tutorial, 2008. ICICDT 2008. IEEE International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-1810-7
Electronic_ISBN :
978-1-4244-1811-4
DOI :
10.1109/ICICDT.2008.4567285
